Integrated GaN photonic circuits on silicon (100) for second harmonic generation

摘要

We demonstrate second order optical nonlinearity in a silicon architecturethrough heterogeneous integration of single-crystalline gallium nitride (GaN)on silicon (100) substrates. By engineering GaN microrings for dual resonancearound 1560 nm and 780 nm, we achieve efficient, tunable second harmonicgeneration at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to beas high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency windowcovering ultraviolet, visible and infrared wavelengths, our platform provides aviable route for the on-chip generation of optical wavelengths in both the farinfrared and near-UV through a combination of \{chi}(2) enabledsum-/difference-frequency processes.